Independent Control of Ion Density and Ion Bombardment Energy in a Dual RF Excitation Plasma
| Autor: | Tadahiro Ohmi, Hans‐Dirk Löwe, H.H. Goto |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1993 |
| Předmět: |
Plasma etching
Chemistry RF power amplifier Analytical chemistry Substrate (electronics) Plasma Condensed Matter Physics Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Physics::Plasma Physics Excited state Electrode Electrical and Electronic Engineering Reactive-ion etching Atomic physics Excitation |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 6(1):58-64 |
| ISSN: | 0894-6507 |
| Popis: | A dual RF excited discharge is described. The dual RF excitation system provides a method to control the substrate self-bias without affecting the state of the discharge. The substrate can be RF-biased utilizing an appropriate excitation frequency and power significantly less than the plasma generating RF power. The substrate self-bias dependence on various system parameters, including substrate excitation frequency, pressure, plasma generating upper electrode RF power, substrate material, and process gas compositions, is described. For a simplified model, a linear relationship between self-bias and RF power is derived using the space-charge limited assumption. The effect of substrate bias on the thermal-oxide etch rate has been studied. The results show good correlation between the ion bombardment energy, i.e., the potential difference across the substrate dark space, and the SiO/sub 2/ etch rate. The SiO/sub 2/ etch rate in a CF/sub 4/ plasma increases linearly with the ion bombardment energy, having a threshold etch energy of approximately 19 V. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|