Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold
Autor: | Andrea Cavalleri, Jeff Squier, Ralph Jimenez, Klaus Sokolowski-Tinten, Cs. Toth, Kent R. Wilson, Craig W. Siders, M. Horn-von Hoegen, D. von der Linde, Christoph Rose-Petruck, Christopher P. J. Barty |
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Rok vydání: | 2016 |
Předmět: |
Materials science
Auger effect business.industry Annealing (metallurgy) Physics::Optics chemistry.chemical_element Germanium Physik (inkl. Astronomie) Auger Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake Semiconductor chemistry symbols Melting point Optoelectronics Atomic physics business Absorption (electromagnetic radiation) |
DOI: | 10.1103/physrevb.63.193306 |
Popis: | The pulse-width dependence of thermal melting and ablation thresholds in germanium and gallium arsenide is correlated to direct, ultrafast x-ray measurements of laser-heated depths. The heating dynamics, determined by the interplay of nonlinear optical absorption, delayed Auger heating, and high-density carrier diffusion, explain the scaling laws of thermal melting thresholds in different semiconductors. |
Databáze: | OpenAIRE |
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