4–12- and 25–34-GHz Cryogenic mHEMT MMIC Low-Noise Amplifiers
| Autor: | Matthias Seelmann-Eggebert, Enrique Villa, Hermann Massler, Arnulf Leuther, D. Bruch, J. D. Gallego-Puyol, Michael Schlechtweg, I. Malo-Gomez, B. Baldischweiler, Beatriz Aja Abelán, C. Diez-Gonzalez, Eduardo Artal, I. Lopez-Fernandez |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2012 |
| Předmět: |
Noise temperature
Radiation Materials science business.industry cryogenic low-noise amplifier (LNA) Amplifier Coplanar waveguide Transistor Electrical engineering metamorphic high electron mobility transistor (mHEMT) Cryogenics Condensed Matter Physics Noise (electronics) monolithic microwave integrated circuit (MMIC) law.invention law Low-power electronics Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 60:4080-4088 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2012.2221735 |
| Popis: | In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) for cryogenic applications based on a 100-nm metamorphic high-electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide are reported. A three-stage LNA, operating in 4-12 GHz and cooled to 15 K exhibits an associated gain of 31.5 dB ± 1.8 dB and average noise temperature of 5.3 K (NF=0.079 dB) with a low power dissipation of 8 mW. Additionally another three-stage LNA 25-34 GHz cooled to 15 K has demonstrated a flat gain of 24.2 dB ± 0.4 dB with 15.2 K (NF=0.22 dB), average noise temperature, with a very low power dissipation of 2.8 mW on chip. The mHEMT-based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio-astronomy applications. |
| Databáze: | OpenAIRE |
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