The effect of thermal annealing on the Ni/Au contact of p-type GaN

Autor:	Jinn-Kong Sheu, C. W. Wang, Yan-Kuin Su, J. M. Hong, E. K. Lin, W. C. Chen, Gou-Chung Chi, C. N. Huang, Yueh-Chung Yu, C. Y. Chen
Rok vydání:	1998
Předmět:	symbols.namesake Auger electron spectroscopy Materials science Auger effect Annealing (metallurgy) Schottky barrier X-ray crystallography symbols Analytical chemistry General Physics and Astronomy Rutherford backscattering spectrometry Electron beam physical vapor deposition Ohmic contact
Zdroj:	Scopus-Elsevier
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.367084
Popis:	In this study, the Ni/Au layers prepared by electron beam evaporation and thermal alloying were used to form Ohmic contacts on p-type GaN films. Before thermal alloying, the current–voltage (I–V) characteristic of Ni/Au contact on p-type GaN film shows non-Ohmic behavior. As the alloying temperature increases to 700 °C, the I–V curve shows a characteristic of Ohmic contact. The Schottky barrier height reduction may be attributed to the presence of Ga–Ni and Ga–Au compounds, such as Ga4Ni3, Ga3Ni2, GaAu, and GaAu2, at the metal-semiconductor interface. The diffusing behavior of both Ni and Au have been studied by using Auger electron spectroscopy and Rutherford backscattering spectrometry. In addition, x-ray diffraction measurements indicate that the Ni3N and Ga4Ni3 compounds were formed at the metal-semiconductor interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0987e0f3f88e88ed53e069bb2ebf66e9 https://doi.org/10.1063/1.367084 Zobrazit plný text záznamu