Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
| Autor: | Mark E. Twigg, Mohammad Fatemi, Steve Arthur, Robert E. Stahlbush, Shao Ping Wang, Jeffery B. Fedison, Jesse B. Tucker |
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| Rok vydání: | 2004 |
| Předmět: |
Threading dislocations
Materials science Solid-state physics Condensed matter physics Mechanical Engineering Stacking PIN diode Biasing Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Crystallography chemistry Mechanics of Materials Transmission electron microscopy law Materials Chemistry Silicon carbide Partial dislocations General Materials Science Electrical and Electronic Engineering Dislocation |
| Zdroj: | Materials Science Forum. :537-542 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.457-460.537 |
| Popis: | Using plan-view transmission electron microscopy (TEM), we have identified stacking faults (SFs) in 4H-SiC PiN diodes subjected to both light and heavy electrical bias. Our observations suggest that the widely expanded SFs seen after heavy bias are faulted dislocation loops that have expanded in response to strain of the 4H-SiC film, while faulted screw or 60° threading dislocations do not give rise to widely expanded SFs. Theoretical calculations show that the expansion of SFs depends on the Peach-Koehler (PK) forces on the partial dislocations bounding the SFs, indicating that strain plays a critical role in SF expansion. |
| Databáze: | OpenAIRE |
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