VDS and VGS Depolarization Effect on SiC MOSFET Short-Circuit Withstand Capability Considering Partial Safe Failure-Mode
| Autor: | Jean-Michel Reynes, Wadia Jouha, Yazan Barazi, Frédéric Richardeau |
|---|---|
| Přispěvatelé: | IRT Saint Exupéry - Institut de Recherche Technologique, Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Technology
Control and Optimization Materials science Silicon Thermal runaway Energy Engineering and Power Technology chemistry.chemical_element 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences chemistry.chemical_compound SiC MOSFET failure analysis gate damage fail-to-open fail-to-short 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Silicon carbide Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Power MOSFET Engineering (miscellaneous) 010302 applied physics Renewable Energy Sustainability and the Environment business.industry [SPI.NRJ]Engineering Sciences [physics]/Electric power 020208 electrical & electronic engineering chemistry Optoelectronics business Failure mode and effects analysis Short circuit Energy (miscellaneous) Voltage |
| Zdroj: | Energies, Vol 14, Iss 7960, p 7960 (2021) Energies; Volume 14; Issue 23; Pages: 7960 Energies Energies, MDPI, 2021, Invited Paper-Special Issue Safety Design and Management of Power Devices including Gate-Drivers, ⟨10.3390/en14237960⟩ |
| ISSN: | 1996-1073 |
| DOI: | 10.3390/en14237960⟩ |
| Popis: | International audience; This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution.This paper presents a detailed analysis of 1200 V Silicon Carbide (SiC) power MOSFETexhibiting different short-circuit failure mechanisms and improvement in reliability by VDS andVGS depolarization. The device robustness has undergone an incremental pulse under differentdensity decreasing; either drain-source voltage or gate-driver voltage. Unlike silicon device, the SiCMOSFET failure mechanism firstly displays specific gradual gate-cracks mechanism and progressivegate-damage accumulations greater than 4 µs/9 J·cm−2. Secondly, a classical drain-source thermalrunaway appears, as for silicon devices, in a time greater than 9 µs. Correlations with short-circuitenergy measurements and temperature simulations are investigated. It is shown that the firstmechanism is an incremental soft gate-failure-mode which can be easily used to detect and protectthe device by a direct feedback on the gate-driver. Furthermore, it is highlighted that this newmechanism can be sufficiently consolidated to avoid the second drain-source mechanism which is ahard-failure-mode. For this purpose, it is proposed to sufficiently depolarize the on-state gate-drivevoltage to reduce the chip heating-rate and thus to decouple the failure modes. The device is muchmore robust with a short-circuit withstand time higher than 10 µs, as in silicon, no risk of thermalrunaway and with an acceptable penalty on RDS-ON. |
| Databáze: | OpenAIRE |
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