| Autor: |
Yu Chun Chen, Ya-Hsiang Tai, Iue Hen Li, Ting-Chang Chang, Tseung-Yuen Tseng, Wan Fang Chung, Hung Wei Li |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
ECS Meeting Abstracts. :2113-2113 |
| ISSN: |
2151-2043 |
| Popis: |
We have investigated the gate bias stress-induced instability on the electrical properties with different pre-treatments for sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The device with illuminating and heating pre-treatments under the positive/negative gate bias stress in vacuum had the smallest threshold voltage shift as the stress duration increased, while the device with oxygen gas pre-treatment exhibited an obvious variation. These electrical instabilities were ascribed to the charge trapping in the gate insulator and the oxygen/water adsorption on the active layer. It indicates that the specific pre-treatment for the a-IGZO film can improve the device stability. It also provides the important information for the subsequent passivation process concerning the pre-treatment of the active layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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