| Autor: |
W. Heinrich, F. Beisswanger, C.N. Rheinfelder, J. Gerdes, F.J. Schmuckle, J.-F. Luy, Karl Strohm |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
1996 IEEE MTT-S International Microwave Symposium Digest. |
| Popis: |
First results on coplanar MMICs with SiGe HBTs are presented. The circuits are fabricated on high-resistivity Si substrates using a double-mesa HBT process. In the Ka-band, an oscillator output power of 1 dBm and 4.4 dB gain for a one-stage amplifier are achieved. This demonstrates the potential of SiGe transistors for applications in the higher microwave range. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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