Enhanced Deep-Ultraviolet Responsivity in Aluminum-Gallium Oxide Photodetectors via Structure Deformation by High-Oxygen-Pressure Pulsed Laser Deposition
| Autor: | Sin-Liang Ou, Dong-Sing Wuu, Shuo-Huang Yuan, Shiau-Yuan Huang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Photocurrent
Materials science business.industry 02 engineering and technology Deformation (meteorology) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Pulsed laser deposition Condensed Matter::Materials Science Responsivity Absorption edge X-ray photoelectron spectroscopy Optoelectronics General Materials Science Thin film 0210 nano-technology business Dark current |
| Zdroj: | ACS applied materialsinterfaces. 11(19) |
| ISSN: | 1944-8252 |
| Popis: | Aluminum-gallium oxide (AGO) thin films with wide bandgaps of greater than 5.0 eV were grown using pulsed laser deposition. As evidenced by X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy, the oxygen chamber pressure considerably affected the lattice deformation in the AGO materials. Under high oxygen pressure, the lattice deformation reduced the d-spacing of the AGO(-201) plane. In the measured transmittance spectra of the AGO films, this narrowing of the d-spacing in the main plane manifested as a high-energy shift of the absorption edge. The AGO films were then installed as the active layers in the metal-semiconductor-metal photodetectors (PDs). The lattice deformation was observed to enhance the photocurrent and reduce the dark current of the device. The responsivity was 20.7 times higher in the lattice-deformed AGO-based PD sample than that in the nondeformed sample. It appeared that the lattice deformation induced the separation of the piezopotential, improving the efficiency of the photogenerated carrier recombination and, consequently, shortening the decay time of the photodetector. |
| Databáze: | OpenAIRE |
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