Annealing studies combined with low temperature emission Mössbauer spectroscopy of short-lived parent isotopes : Determination of local Debye-Waller factors
| Autor: | Karl Johnston, Sveinn Olafsson, H. P. Gislason, Roberto Mantovan, Haraldur P. Gunnlaugsson, T. E. Mølholt, I. Unzueta, P.B. Krastev, Juliana Schell, B. Qi, Krish Bharuth-Ram, Hilary Masenda, Deena Naidoo |
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| Přispěvatelé: | European Commission |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Annihilation Materials science Isotope Annealing (metallurgy) ion implantations Analytical chemistry 01 natural sciences 010305 fluids & plasmas Amorphous solid symbols.namesake pressure Maschinenbau Impurity Lattice (order) 0103 physical sciences Mössbauer spectroscopy symbols Detectors and Experimental Techniques Instrumentation Debye |
| Zdroj: | Addi: Archivo Digital para la Docencia y la Investigación Universidad del País Vasco Gunnlaugsson, H P, Masenda, H, Mølholt, T E, Bharuth-Ram, K, Ólafsson, S, Johnston, K, Schell, J, Gislason, H P, Krastev, P B, Mantovan, R, Naidoo, D, Qi, B & Unzueta, I 2021, ' Annealing studies combined with low temperature emission Mössbauer spectroscopy of short-lived parent isotopes: Determination of local Debye–Waller factors ', Review of Scientific Instruments, vol. 92, no. 1, 013901 . https://doi.org/10.1063/5.0020951 Addi. Archivo Digital para la Docencia y la Investigación instname |
| DOI: | 10.1063/5.0020951 |
| Popis: | An extension of the online implantation chamber used for emission Mossbauer Spectroscopy (eMS) at ISOLDE/CERN that allows for quick removal of samples for offline low temperature studies is briefly described. We demonstrate how online eMS data obtained during implantation at temperatures between 300 K and 650 K of short-lived parent isotopes combined with rapid cooling and offline eMS measurements during the decay of the parent isotope can give detailed information on the binding properties of the Mossbauer probe in the lattice. This approach has been applied to study the properties of Sn impurities in ZnO following implantation of In-119 (T-1/2 = 2.4 min). Sn in the 4+ and 2+ charge states is observed. Above T > 600 K, Sn2+ is observed and is ascribed to Sn on regular Zn sites, while Sn2+ detected at T < 600 K is due to Sn in local amorphous regions. A new annealing stage is reported at T approximate to 550 K, characterized by changes in the Sn4+ emission profile, and is attributed to the annihilation of close Frenkel pairs. We acknowledge the support of the ISOLDE collaboration and technical teams. Fruitful discussion with Professor D. C. Lupascu University of Duisburg-Essen is acknowledged. I.U. acknowledges the support of the Ministry of Economy and Competitiveness (MINECO/FEDER) under Project No. RTI2018-094683-B-C55 and Basque Government Grant No. IT-1005-16. K.B.R., H.M., and D.N. acknowledge the support of Department of Science and Innovation (South Africa). B.Q., S.., and H.P.G. acknowledge support from the University of Iceland Research Fund. J. G. Martins Correia is acknowledged for technical assistance during the beam time. The Federal Ministry of Education and Research (BMBF) through Grant Nos. 05K16PGA, 05K16SI1, and 05K19SI1 "eMMA" is acknowledged. The European Commission through the Horizon 2020 programme (Grant Nos. 654002 and ENSAR 2) is acknowledged. |
| Databáze: | OpenAIRE |
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