Autor: |
M. Secu, A.A. Turkin, H.W. den Hartog, D.I. Vainshtein |
Přispěvatelé: |
Zernike Institute for Advanced Materials |
Jazyk: |
angličtina |
Rok vydání: |
2007 |
Předmět: |
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Zdroj: |
Physica Status Solidi (C), 4(3), 1020-1023 |
Popis: |
Thermoluminescence (TL) manifested by gamma-irradiated mineral zircon has shown a strong TL peak at about 165 °C which is due to recombination of electrons and Dy3+ related shallow hole traps. After they have been removed by a short preheat we have observed two TL peaks at 300-320 °C and ≈420 °C, which are mainly due to recombination of electrons and Tb3+ related hole traps centres yielding its characteristic luminescence. The experimental results indicate that optically stimulated luminescence (OSL) is due to luminescent emission of Tb3+ ions and [SiO4]4– groups. The deep traps related to the 420 °C TL peak contribute to the Tb3+ related OSL. The deep traps related to the 300-320 °C TL peak contribute to OSL associated with the luminescent emission of [SiO4]4– groups. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
Databáze: |
OpenAIRE |
Externí odkaz: |
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