The nonlinear optical properties of GaAs-based quantum wells with Kratzer–Fues confining potential: Role of applied static fields and non-resonant laser radiation

Autor: R.L. Restrepo, F. Ungan, M.E. Mora-Ramos, J.C. Martínez-Orozco
Přispěvatelé: Ungan, F., Faculty of Technology, Department of Optical Engineering, Sivas Cumhuriyet University, Sivas, 58140, Turkey -- Martínez-Orozco, J.C., Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, Zacatecas, Zac. CP 98060, Mexico -- Restrepo, R.L., Universidad EIA, Envigado, CP 055428, Colombia -- Mora-Ramos, M.E., Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Cuernavaca, Morelos CP 62209, Mexico
Rok vydání: 2019
Předmět:
Zdroj: Optik. 185:881-887
ISSN: 0030-4026
Popis: In the present paper, we report a theoretical investigations on the linear and nonlinear optical properties of a GaAs-based quantum well with the Kratzer-Fues confining potential, including the effects of external applied static electric, magnetic, and intense THz laser fields. The electronic structure of this system is obtained by using the effective-mass and envelope wave function approaches. Then, the coefficients of linear, third-order nonlinear, and total optical absorption (OACs) and relative refractive index changes (RICs) are calculated by using the iterative solutions of the compact-density matrix approach (CDMA). The obtained numerical results are reported as functions of the incident photon energy taking into account several values of static electric, static magnetic, and intense THz laser fields. These results show that the nonlinear optical properties of this structure are significantly affected by the magnitude of the external applied fields. © 2019 Elsevier GmbH
This research was partially supported by Universidad EIA through the project: “Propiedades optoelectrónicas en puntos cuánticos”.
Databáze: OpenAIRE