Carrier diffusion measurements in InSb by the angular dependence of degenerate four-wave mixing
| Autor: | David J. Hagan, Hugh A. MacKenzie, W. J. Firth, H. A. Al Attar |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
chemistry.chemical_classification
Physics business.industry Degenerate energy levels Nonlinear optics Atomic and Molecular Physics and Optics Condensed Matter::Materials Science Four-wave mixing Optics chemistry Angular dependence Diffusion (business) business Image resolution Inorganic compound Mixing (physics) |
| Zdroj: | Optics letters. 10(4) |
| ISSN: | 0146-9592 |
| Popis: | Studies of the angular dependence of cw degenerate four-wave mixing in n-type InSb have yielded a value for the diffusion length, l(D), of 60 +/- 2 microm. From this, the dependence of l(D) on photoexcited carrier concentration is calculated. A simple model has been developed to estimate the corresponding parallel-processing capabilities of semi-conductor-based, all-optical, parallel-processing digital computing systems. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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