Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations

Autor:	I. Vickridge, J.-J. Ganem, J. L. Cantin, T. Åkermark, H. J. von Bardeleben, S. Rigo, I. Trimaille, L. G. Gosset
Rok vydání:	1999
Předmět:	Materials science Silicon chemistry Passivation Hydrogen Nuclear reaction analysis Analytical chemistry General Physics and Astronomy chemistry.chemical_element Molecule Thermal treatment Dielectric Hydrogen passivation
Zdroj:	Scopus-Elsevier
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.369730
Popis:	The modification by postoxidation NO treatments of the Si/SiO2 interface in thermally grown Si(100)/SiO2 layers has been studied by nuclear reaction analysis and electron paramagnetic resonance spectroscopy. Our results demonstrate a selective incorporation of NO molecules at the Si/SiO2 interface and a drastic reduction in the interface defect density. In this new configuration, the Pb center density, which is typically 2×1012 cm−2 in the as oxidized samples, is reduced to below 1011 cm−2 without any hydrogen passivation. The thermal treatment in NO atmospheres opens the perspective for the formation of hydrogen free low defect Si(100)/SiOxNy interfaces conserving the qualities of the SiO2 dielectric.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08b3fbda3214c4cae6032892ae00879e https://doi.org/10.1063/1.369730 Zobrazit plný text záznamu