Atomistic simulation of ion irradiation of semiconductor heterostructures
| Autor: | Flyura Djurabekova, Kai Nordlund, Jarno Laakso, C. Fridlund |
|---|---|
| Přispěvatelé: | Department of Physics, Helsinki Institute of Physics |
| Jazyk: | angličtina |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science Ion beam mixing Silicon Annealing (metallurgy) chemistry.chemical_element Nanotechnology Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Energy minimization 114 Physical sciences 01 natural sciences Ion Molecular dynamics chemistry Chemical physics 0103 physical sciences Irradiation 0210 nano-technology Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2017.04.034 |
| Popis: | Host publication title: Proceedings of the 20th International Conference on Ion Beam Modification of Materials (IBMM 2016) Proceeding volume: 409 Recently the possibility to use ion beam mixing combined with suitable annealing has been suggested as a possible means to synthesize individual silicon quantum dots in a silica layer, with the possibility to function as single-electron transistors. For this to work, it is necessary to have a careful control of the ion beam mixing in Si/SiO2/Si heterostructures, as well as understand the nature of not only the composition, but also the chemical modification of the SiO2 layer by the mixing with Si. We describe here a procedure to synthesize Si/SiO2/Si heterostructures in molecular dynamics, with an energy minimization scheme to create strong and stable interfaces. The created heterostructures are irradiated at energies and fluences matching corresponding experiments. The results show a considerable degree of interface mixing, as expected. They also show some densification of the silica layer due to recoil implantation, and formation of a considerable number of coordination defects. Due to the strong covalent bonding in silicon and silica, the densification is not fully elastically relaxed even in the presence of a nearby surface. |
| Databáze: | OpenAIRE |
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