Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
| Autor: | Seo Hyoung Chang, Miyoung Kim, Yoonkoo Kim, Sang Mo Yang, Yeong Jae Shin, Lingfei Wang, Jin-Seok Chung, Daesu Lee, Tae Won Noh, Jeong Rae Kim, Ho-Hyun Nahm, Jong-Gul Yoon |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Condensed Matter - Materials Science
Materials science Stacking Analytical chemistry Oxide Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Heterojunction 02 engineering and technology Partial pressure 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Pulsed laser deposition chemistry.chemical_compound chemistry Chemical physics Torr 0103 physical sciences General Materials Science Chemical stability 010306 general physics 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 9:27305-27312 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.7b07813 |
| Popis: | With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures. Comment: 27 pages, 6 figures, Supporting Information |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|