Presence of Peierls pairing and absence of insulator-to-metal transition in VO2 (A): a structure–property relationship study

Autor: Alla Artemenko, Antoine Villesuzanne, M. Pollet, Rodolphe Decourt, S. R. Popuri
Přispěvatelé: Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery, Heriot-Watt University [Edinburgh] (HWU), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB), European Community's Marie Curie Initial Training Network (ITN) 7th Framework Programme – SOPRANO FP7/2007–2013 (Grant Agreement No. 214040) and European Community's Marie Curie Incoming International Fellowship (IIF) 7th Framework Programme – EPREXINA FP7/2007–2013 (Grant Agreement No. 255662.
Rok vydání: 2017
Předmět:
Zdroj: Physical Chemistry Chemical Physics
Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2017, 19 (9), pp.6601-6609. ⟨10.1039/C7CP00248C⟩
ISSN: 1463-9084
1463-9076
DOI: 10.1039/c7cp00248c
Popis: International audience; Layered vanadium oxides have been extensively explored due to their interesting metal-insulator transitions and energy conversion/storage applications. In the present study, we have successfully synthesized VO2 (A) polymorph powder samples by a single-step hydrothermal synthesis process and consolidated them using spark plasma sintering. The structural and electronic properties of VO2 (A) are measured over a large temperature range from liquid helium, across the structural transition (400-440 K) and up to 500 K. The structural analysis around this transition reveals an antiferrodistorsive to partially ferrodistorsive ordering upon cooling. It is followed by a progressive antiferromagnetic spin pairing which fully settles at about 150 K. The transport measurements show that, in contrast to the rutile archetype VO2 (R/M1), the structural transition comes with a transition from semiconductor to band-type insulator. Under these circumstances, we propose a scenario with a high temperature antiferrodistorsive paramagnetic semiconducting phase, followed by an intermediate regime with a partially ferrodistorsive paramagnetic semiconducting phase, and finally a low temperature partially ferrodistorsive antiferromagnetic band insulator phase with a possible V-V Peierls-type pairing.
Databáze: OpenAIRE