Picosecond multilevel resistive switching in tantalum oxide thin films
| Autor: | Viktor Havel, Vikas Rana, Rainer Waser, Ulrich Böttger, Stephan Menzel, Karsten Fleck, Moritz von Witzleben |
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| Rok vydání: | 2020 |
| Předmět: |
Information storage
Materials science Capacitive sensing FOS: Physical sciences lcsh:Medicine Applied Physics (physics.app-ph) 02 engineering and technology 01 natural sciences Article Switching time 0103 physical sciences Thin film lcsh:Science 010302 applied physics Resistive touchscreen Multidisciplinary business.industry lcsh:R Physics - Applied Physics 021001 nanoscience & nanotechnology Electrical and electronic engineering Neuromorphic engineering Picosecond Scalability Computer data storage Optoelectronics lcsh:Q 0210 nano-technology business ddc:600 |
| Zdroj: | Scientific Reports Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020) Scientific reports 10, 16391 (2020). doi:10.1038/s41598-020-73254-2 Scientific reports 10(1), 16391 (2020). doi:10.1038/s41598-020-73254-2 |
| ISSN: | 2045-2322 |
| DOI: | 10.1038/s41598-020-73254-2 |
| Popis: | The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics. The switching kinetics of Ta$_{2}$O$_{5}$-based cells was investigated in a wide range over 15 orders of magnitude from 250 ps to 10$^{5}$ s. We found strong evidence for a switching speed of 10 ps which is consistent with analog electronic circuit simulations. On all time scales, multi-bit data storage capabilities were demonstrated. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications. Compiled PDF should contain 24 pages, 5 figures and 50 references |
| Databáze: | OpenAIRE |
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