AlTiTaZr(-N) Medium-Entropy Films Deposited by Magnetron Sputtering with a Combinatorial Approach
| Autor: | Frédéric Sanchette, Alexandre Michau, Sofiane Achache, Frédéric Schuster, Mohamed El Garah |
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| Přispěvatelé: | Laboratoire des Systèmes Mécaniques et d'Ingénierie Simultanée (LASMIS), Université de Technologie de Troyes (UTT), CEA- Saclay (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Argon
Materials science Silicon Annealing (metallurgy) Mechanical Engineering Analytical chemistry chemistry.chemical_element Sputter deposition Nitride [SPI]Engineering Sciences [physics] chemistry Mechanics of Materials General Materials Science Thermal stability Thin film ComputingMilieux_MISCELLANEOUS Solid solution |
| Zdroj: | Journal of Materials Engineering and Performance Journal of Materials Engineering and Performance, 2021, 30 (6), pp.4063-4071. ⟨10.1007/s11665-021-05853-7⟩ |
| ISSN: | 1059-9495 1544-1024 |
| Popis: | AlTiTaZr(-N) films are synthetized by direct current magnetron sputtering technique with a combinatorial approach. Coatings are deposited on glass and silicon substrates from four pure metallic targets in argon-nitrogen gas mixtures. Films deposited in the center of substrates holder have columnar morphology with less compact structure compared to that of films obtained in the targets? axes positions. Various compositions are obtained in one step at each level of the argon nitrogen mixture. Without nitrogen, the coatings deposited in the axis of the targets are solid solutions derived from the corresponding metal. Increasing the nitrogen flow rate favors the growth of fcc metal nitrides in the targets? axes whereas the fcc single phased films are detected in the center of substrates holder. The metallic composition is quasi-equiatomic in this case. Hardness and Young?s modulus of these MEA films are in the ranges 12-15 GPa and 141.7-142.9 GPa, respectively, and this film?s structure is thermally stable after annealing at 800 °C for 3 h. |
| Databáze: | OpenAIRE |
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