Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon
| Autor: | Joseph H. Ngai, Nicholas F. Quackenbush, Peter V. Sushko, Joseph C. Woicik, Zheng Hui Lim, James M. Ablett, Mark E. Bowden, Scott A. Chambers, Tien-Lin Lee, James M. LeBeau, M. Chrysler, Aubrey Penn, Zihua Zhu |
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| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Physical Review Letters. 123 |
| ISSN: | 1079-7114 0031-9007 |
| Popis: | We report charge transfer and built-in electric fields across the epitaxial SrNb_{x}Ti_{1-x}O_{3-δ}/Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions. |
| Databáze: | OpenAIRE |
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