SiC structural characterization by non destructive near-field microscopy techniques
| Autor: | Wu, Kuan-Ting, Vuillermet, Enora, Usureau, Elise, El-Helou, Youssef, Kazan, Michel, Woon, Wei-Yen, Lazar, Mihai, Bruyant, Aurelien |
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| Přispěvatelé: | Lumière, nanomatériaux et nanotechnologies (L2n), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS), Department of Physics, American University of Beirut [Beyrouth] (AUB), National Central University [Taiwan] (NCU), ANR-19-CE42-0008,TempoScopy,Cartographie de Température et de Conductivité Thermique de Composants de Puissance par Spectro-nanoScopie(2019) |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | 2022 International Semiconductor Conference (CAS) 2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.73-76, ⟨10.1109/CAS56377.2022.9934358⟩ |
| DOI: | 10.1109/cas56377.2022.9934358 |
| Popis: | International audience; SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype. |
| Databáze: | OpenAIRE |
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