Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base
| Autor: | Erik Haralson, Erdal Suvar, Mikael Östling, Yong-Bin Wang, Henry H. Radamson, Bengt Gunnar Malm |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
heterojunction bipolar transistors (HBTs) SiGe Heterojunction bipolar transistor silicide law.invention nickel chemistry.chemical_compound Electrical resistance and conductance law Electrical resistivity and conductivity SiGeC Silicide Electronic engineering Wafer Annan elektroteknik och elektronik Electrical and Electronic Engineering Common emitter Other Electrical Engineering Electronic Engineering Information Engineering business.industry carbon Transistor base resistance Electronic Optical and Magnetic Materials Silicon-germanium chemistry Optoelectronics business silicon-germanium |
| Zdroj: | IEEE Electron Device Letters. 26:246-248 |
| ISSN: | 0741-3106 |
| Popis: | A novel SiGeC HBT process with a quasi-self-aligned emitter-base architecture and a fully nickel-silicided extrinsic base region has been developed. A very low total base resistance R/sub B/ was achieved along with simultaneous NiSi formation on the polycrystalline emitter and collector regions. Uniform silicide formation was obtained across the wafer, and the resistivity of the Ni(SiGe:C) silicide layer was 24 /spl mu//spl Omega//spl middot/cm. About 50-100 nm of lateral growth of silicide underneath the emitter pedestal was observed. DC and HF results with balanced f/sub T//f/sub MAX/ values of 41/42 GHz were demonstrated for 0.5/spl times/10/spl mu/m/sup 2/ transistors. |
| Databáze: | OpenAIRE |
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