Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method
| Autor: | Okhyun Nam, Jaedo Pyeon, Uiho Choi, Jinwan Kim, Byeongchan So |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Technology
Materials science Photoluminescence lcsh:Medicine 02 engineering and technology Chemical vapor deposition Epitaxy 01 natural sciences Article Etching (microfabrication) 0103 physical sciences lcsh:Science Lithography 010302 applied physics Multidisciplinary business.industry lcsh:R 021001 nanoscience & nanotechnology Optoelectronics Quantum efficiency Nanorod lcsh:Q Dislocation 0210 nano-technology business ddc:600 |
| Zdroj: | Scientific Reports Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018) Scientific reports, 8, Art.-Nr.: 935 |
| ISSN: | 2045-2322 |
| Popis: | We report deep ultraviolet (UVC) emitting core-shell-type AlGaN/AlN multiple quantum wells (MQWs) on the AlN nanorods which are prepared by catalyst/lithography free process. The MQWs are grown on AlN nanorods on a sapphire substrate by polarity-selective epitaxy and etching (PSEE) using high-temperature metal organic chemical vapor deposition. The AlN nanorods prepared through PSEE have a low dislocation density because edge dislocations are bent toward neighboring N-polar AlN domains. The core–shell-type MQWs grown on AlN nanorods have three crystallographic orientations, and the final shape of the grown structure is explained by a ball-and-stick model. The photoluminescence (PL) intensity of MQWs grown on AlN nanorods is approximately 40 times higher than that of MQWs simultaneously grown on a planar structure. This result can be explained by increased internal quantum efficiency, large active volume, and increase in light extraction efficiency based on the examination in this study. Among those effects, the increase of active volume on AlN nanorods is considered to be the main reason for the enhancement of the PL intensity. |
| Databáze: | OpenAIRE |
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