Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection
| Autor: | Francesco Scappaviva, Gianni Bosi, Andrea Biondi, Sara D’Angelo, Luca Cariani, Valeria Vadalà, Antonio Raffo, Davide Resca, Elisa Cipriani, Giorgio Vannini |
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| Přispěvatelé: | Scappaviva, F, Bosi, G, Biondi, A, D'Angelo, S, Cariani, L, Vadalà, V, Raffo, A, Resca, D, Cipriani, E, Vannini, G |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
small- and large-signal characterization
low-noise amplifier (LNA) Computer Networks and Communications transmit/receive module (TRM) high-power amplifier (HPA) switch Hardware and Architecture Control and Systems Engineering single-chip front-end (SCFE) gallium nitride (GaN) Signal Processing ING-INF/01 - ELETTRONICA Electrical and Electronic Engineering |
| Zdroj: | Electronics; Volume 11; Issue 19; Pages: 2998 |
| ISSN: | 2079-9292 |
| DOI: | 10.3390/electronics11192998 |
| Popis: | In this paper, a single-chip front-end (SCFE) operating in Ku-band (12–17 GHz) is presented. It is designed exploiting a GaN on SiC technology featured by 150 nm gate length provided by UMS foundry. This MMIC integrates high power and low noise amplification functions enabled by a single-pole double-throw (SPDT) switch, occupying a total area of 20 mm2. The transmitting chain (Tx) presents a 39 dBm output power, a power added efficiency (PAE) higher than 30% and a 22 dB power gain. The receive path (Rx) offers a low noise figure (NF) lower than 2.8 dB with 25 dB of linear gain. The Rx port output power leakage is limited on chip to be below 15 dBm even at high compression levels. Finally, a complete characterization of the SCFE in the Rx and Tx modes is presented, also showing the measurement of the recovery time in the presence of large-signal interferences. |
| Databáze: | OpenAIRE |
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