Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency
| Autor: | Yong-Hoon Cho, Jiwoong Baek, Bugeun Ki, Chulwon Lee, Jungwoo Oh, Donguk Nam, Daeik Kim |
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| Rok vydání: | 2016 |
| Předmět: |
Photoluminescence
Materials science Doping Analytical chemistry 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Epitaxy Mass spectrometry 01 natural sciences Electronic Optical and Magnetic Materials 010309 optics symbols.namesake Ion implantation Transmission electron microscopy 0103 physical sciences symbols 0210 nano-technology Raman spectroscopy |
| Zdroj: | OPTICAL MATERIALS EXPRESS(6): 9 |
| ISSN: | 2159-3930 |
| DOI: | 10.1364/ome.6.002939 |
| Popis: | We investigated the optical, electrical, and structural properties of epitaxially grown Ge-on-Si substrates after phosphorous implantation. Ion implantation increases n-type doping in Ge for an on-chip light source. However, its effects on Ge should be carefully studied as implantation may increase the recombination sites, and possibly reduce light-emitting efficiency. We studied the light-emitting efficiency of implanted Ge using various material characterizations. We found that phosphorous implantation increased the doping concentration of in situ doped Ge-on-Si, which boosted the photoluminescence by 12-30%. It is therefore critical to optimize the post-annealing and implantation doses to increase light-emitting efficiency of Ge. (C) 2016 Optical Society of America |
| Databáze: | OpenAIRE |
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