Diffusion and Interface Effects during Preparation of All-Solid Microstructured Fibers
Autor: | Pan Zhiwen, Aichele Claudia, Kobelke Jens, Schuster Kay, Bartelt Hartmut, Unger Sonja, Bierlich Jorg, Wondraczek Katrin |
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Rok vydání: | 2014 |
Předmět: |
All-silica fiber
Materials science Optical fiber chemistry.chemical_element Germanium lcsh:Technology Article law.invention law General Materials Science Composite material lcsh:Microscopy lcsh:QC120-168.85 fiber manufacturing lcsh:QH201-278.5 Dopant lcsh:T Doping Microstructured optical fiber chemistry lcsh:TA1-2040 microstructured fiber lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering lcsh:Engineering (General). Civil engineering (General) photonic crystal fiber lcsh:TK1-9971 Hard-clad silica optical fiber Photonic-crystal fiber |
Zdroj: | Materials Materials, Vol 7, Iss 9, Pp 6879-6892 (2014) Volume 7 Issue 9 Pages 6879-6892 |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma7096879 |
Popis: | All-solid microstructured optical fibers (MOF) allow the realization of very flexible optical waveguide designs. They are prepared by stacking of doped silica rods or canes in complex arrangements. Typical dopants in silica matrices are germanium and phosphorus to increase the refractive index (RI), or boron and fluorine to decrease the RI. However, the direct interface contact of stacking elements often causes interrelated chemical reactions or evaporation during thermal processing. The obtained fiber structures after the final drawing step thus tend to deviate from the targeted structure risking degrading their favored optical functionality. Dopant profiles and design parameters (e.g., the RI homogeneity of the cladding) are controlled by the combination of diffusion and equilibrium conditions of evaporation reactions. We show simulation results of diffusion and thermal dissociation in germanium and fluorine doped silica rod arrangements according to the monitored geometrical disturbances in stretched canes or drawn fibers. The paper indicates geometrical limits of dopant structures in sub-µm-level depending on the dopant concentration and the thermal conditions during the drawing process. The presented results thus enable an optimized planning of the preform parameters avoiding unwanted alterations in dopant concentration profiles or in design parameters encountered during the drawing process. |
Databáze: | OpenAIRE |
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