Superconducting platinum silicide for electron cooling in silicon
| Autor: | M. J. Prest, J. S. Richardson-Bullock, Juha T. Muhonen, Terry E. Whall, David Gunnarsson, David R. Leadley, Vishal Shah, Evan H. C. Parker, Qing-Tai Zhao, Mika Prunnila |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon ta221 FOS: Physical sciences chemistry.chemical_element Electron law.invention Platinum silicide chemistry.chemical_compound law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Superconducting critical temperature Silicide Materials Chemistry electron cooling Electrical and Electronic Engineering Thin film superconducting materials Superconductivity ta213 Condensed Matter - Mesoscale and Nanoscale Physics business.industry Metallurgy silicon Condensed Matter Physics silicides Electronic Optical and Magnetic Materials chemistry Optoelectronics business low temperatures Electron cooling |
| Zdroj: | Prest, M J, Richardson-Bullock, J S, Zhao, Q T, Muhonen, J, Gunnarsson, D, Prunnila, M, Shah, V A, Whall, T E, Parker, E H C & Leadley, D R 2015, ' Superconducting platinum silicide for electron cooling in silicon ', Solid-State Electronics, vol. 103, pp. 15-18 . https://doi.org/10.1016/j.sse.2014.09.003 |
| DOI: | 10.1016/j.sse.2014.09.003 |
| Popis: | We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK. 4 pages, 4 figures |
| Databáze: | OpenAIRE |
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