Structural and electrical characterization of AuPtAlTi Ohmic contacts to AlGaN∕GaN with varying annealing temperature and Al content
| Autor: | R.S. Balmer, Y. Han, Ian Harrison, Trevor Martin, K.P. Hilton, Michael J. Uren, Michael W. Fay, A.G. Munday, David J. Wallis, Paul D. Brown |
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| Rok vydání: | 2008 |
| Předmět: |
N-TYPE GANFIELD-EFFECT TRANSISTORSTHERMAL-STABILITYRESISTANCETIMICROSTRUCTUREMULTILAYERSPERFORMANCE
Materials science Annealing (metallurgy) Al content Metallurgy Contact resistance General Physics and Astronomy Titanium alloy Algan gan Composite material Microstructure Ohmic contact Planarity testing |
| Zdroj: | Journal of Applied Physics. 103:074501 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.2890978 |
| Popis: | The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts. |
| Databáze: | OpenAIRE |
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