Correction to Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications
| Autor: | John S. Suehle, Tong Ren, John E. Bonevich, Sujitra J. Pookpanratana, Christina A. Hacker, Sean N. Natoli, Curt A. Richter, Hao Zhu, Qiliang Li |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Nanowire High density Semiconductor memory 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Flash memory 0104 chemical sciences Non-volatile memory Redox active Optoelectronics General Materials Science Non-volatile random-access memory 0210 nano-technology business Computer memory |
| Zdroj: | ACS applied materialsinterfaces. 8(30) |
| ISSN: | 1944-8252 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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