Memory maps : Reading RRAM devices without power consumption
| Autor: | Kristjan Kalam, Tõnis Arroval, Helena Castán, Aile Tamm, Salvador Dueñas, Kaupo Kukli, M. Mikko |
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| Přispěvatelé: | Department |
| Rok vydání: | 2018 |
| Předmět: |
Physical mechanism
Materials science 116 Chemical sciences RRAM Comparative studies 02 engineering and technology Memory mapping 7. Clean energy 01 natural sciences Two parameter Semiconductor devices 0103 physical sciences Inductance 010302 applied physics Memory map Insulator materials business.industry Reading (computer) Electrical engineering Equivalent circuits Resistance and inductance 021001 nanoscience & nanotechnology Resistive random-access memory Electric power utilization Power consumption Equivalent circuit Mapas de memoria Memory maps Off state 0210 nano-technology business |
| Zdroj: | UVaDOC: Repositorio Documental de la Universidad de Valladolid Universidad de Valladolid UVaDOC. Repositorio Documental de la Universidad de Valladolid instname |
| DOI: | 10.1149/08508.0201ecst |
| Popis: | Producción Científica A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON and OFF state are different for each structure due to specific physical mechanisms. Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grant TEC2014-52152-C3-3-R) Fondo Europeo de Desarrollo Regional (project TK134) Estonian Research Agency (grants IUT2-24 and PRG4) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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