High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology
| Autor: | Alessandro Chini, Steven P. DenBaars, Mark J. W. Rodwell, V. Paidi, Sarah L. Keller, Stephen I. Long, U.K. Mishra, Robert Coffie, Sten Heikman, Brendan Jude Moran, Shouxuan Xie |
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| Jazyk: | angličtina |
| Rok vydání: | 2003 |
| Předmět: |
Engineering
Radiation business.industry Amplifier Transistor GaN high electron-mobility transistor (HEMT) dBc Differential amplifier Linearity High-electron-mobility transistor intermodulation suppression Condensed Matter Physics Power (physics) law.invention high linearity law Electronic engineering Electrical and Electronic Engineering business monolithic-microwave integrated-circuit (MMIC) power amplifiers GaN high electron-mobility transistor (HEMT) high linearity intermodulation suppression monolithic-microwave integrated-circuit (MMIC) power amplifiers Intermodulation |
| Popis: | A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with bandpass filtering have equivalent efficiency and linearity to push-pull configurations. The common-source class-B circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power-added efficiency (PAE) of 34%. Simulations of common-drain class-B designs predict a PAE of 54% with a superior IM3 suppression of more than 45 dBc over a wider range of bias due to the strong series-series negative feedback offered by the load resistance. |
| Databáze: | OpenAIRE |
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