Experimental and analytical study of saturation current density of laser-doped phosphorus emitters for silicon solar cells
| Autor: | R. Monna, Abdelilah Slaoui, S. Manuel, Bertrand Paviet-Salomon, S. Gall |
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| Přispěvatelé: | Jung, Marie-Anne |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon Renewable Energy Sustainability and the Environment business.industry Doping Analytical chemistry chemistry.chemical_element Laser Thermal diffusivity Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry Saturation current law Physics::Accelerator Physics Optoelectronics business Phosphosilicate glass Sheet resistance Common emitter |
| Zdroj: | Solar Energy Materials and Solar Cells. 95:2536-2539 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2011.03.001 |
| Popis: | Heavily doped emitters with low saturation current density are of particular interest for selective emitter solar cells. These emitters can be obtained by laser doping through the phosphosilicate glass layer formed after thermal diffusion from POCl 3 gas. The experimental results show that in contrast to purely POCl 3 furnace-diffused emitters, the saturation current density of laser-doped emitters does not increase linearly as sheet resistance decreases, but rather features two distinct regimes. In one of these regimes, the saturation current density is found to decrease as the sheet resistance decreases, reaching values lower than those of furnace emitters. This peculiar behaviour was explained by both qualitative analysis and numerical simulations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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