Radiation-induced defects in sapphire single crystals irradiated by a pulsed ion beam
| Autor: | Anatoli I. Popov, H. A. Novikov, R. I. Batalov, S. V. Nikiforov, D.V. Ananchenko, G. R. Ramazanova, R. M. Bayazitov, V. N. Kuzovkov |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Photoluminescence Materials science Ion beam Analytical chemistry Cathodoluminescence 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Thermoluminescence Ion 0103 physical sciences Irradiation 0210 nano-technology Luminescence Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2019.12.032 |
| Popis: | The luminescence and thermal stability of defects formed in α-Al2O3 single crystals after powerful (300 keV) pulsed irradiation with C+/H+ ion beam were investigated. It was found by measuring of optical density, photoluminescence, and pulsed cathodoluminescence that ion irradiation induces both single F-, F+-centers and F2-type aggregate centers. An intense thermoluminescence band with a complex shape was observed in the broad temperature range of 350–700 K, its intensity decreases with increasing of the energy density of the ion beam. The thermal stability of the F-type defects produced in α-Al2O3 after irradiation with a pulsed ion beam is comparable to that in neutron-irradiated samples. The appropriate kinetics of annealing of radiation-induced defects has been analyzed in terms of the diffusion-controlled bimolecular reactions between F-type centers and complementary interstitial oxygen ions. Thus, two important kinetic parameters – the migration energy of mobile interstitials and pre-exponential – have been evaluated and discussed. |
| Databáze: | OpenAIRE |
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