Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach
| Autor: | Jean-Baptiste Doucet, Youssouf Guerfi, Guilhem Larrieu |
|---|---|
| Přispěvatelé: | Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT) |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Nanostructure
Materials science Mechanical Engineering Nanowire Bioengineering Nanotechnology Insulator (electricity) General Chemistry Surface finish Dielectric Planarity testing [SPI]Engineering Sciences [physics] Mechanics of Materials Chemical-mechanical planarization General Materials Science Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Nanoscopic scale |
| Zdroj: | Nanotechnology Nanotechnology, Institute of Physics, 2015, 26 (42), pp.425302. ⟨10.1088/0957-4484/26/42/425302⟩ Nanotechnology, 2015, 26 (42), pp.425302. ⟨10.1088/0957-4484/26/42/425302⟩ |
| ISSN: | 0957-4484 1361-6528 |
| DOI: | 10.1088/0957-4484/26/42/425302⟩ |
| Popis: | International audience; Three-dimensional (3D) nanostructures are emerging as promising building blocks for a large spectrum of applications. One critical issue in integration regards mastering the thin, flat, and chemically stable insulating layer that must be implemented on the nanostructure network in order to build striking nano-architectures. In this letter, we report an innovative method for nanoscale planarization on 3D nanostructures by using hydrogen silesquioxane as a spin-on-glass (SOG) dielectric material. To decouple the thickness of the final layer from the height of the nanostructure, we propose to embed the nanowire network in the insulator layer by exploiting the planarizing properties of the SOG approach. To achieve the desired dielectric thickness, the structure is chemically etched back with a highly diluted solution to control the etch rate precisely. The roughness of the top surface was less than 2 nm. There were no surface defects and the planarity was excellent, even in the vicinity of the nanowires. This newly developed process was used to realize a multilevel stack architecture with sub-deca-nanometer-range layer thickness. |
| Databáze: | OpenAIRE |
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