Fracture toughness assessment of patterned Cu-interconnect stacks by dual-cantilever-beam (DCB) technique
| Autor: | Dmytro Chumakov, Michael Grillberger, M.U. Lehr, F. Lindert, E. Zschech |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: |
Interconnection
Cantilever Materials science business.industry Low-k dielectric Fracture mechanics Dielectric Structural engineering Condensed Matter Physics reliability estimation Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials ultra-low-k (ULK) material adhesion Fracture toughness Stack (abstract data type) microprocessors Miniaturization CPI integrated circuit interconnections Electrical and Electronic Engineering Composite material business semiconductor device mechanical factor |
| Popis: | Dual cantilever beam (DCB) mechanical testing is applied to two kinds of chips, manufactured in the 45 nm technology node. Both chips consist of different numbers of ultra low-k (ULK) dielectric layers, however, they have similarly designed crack-stop structures. It is shown that in all cases, cohesive cracking occurred in the upper ULK layers. The crack-stops hamper the crack propagation, and cracks are deflected outside the interconnect stack. The paths of the deflected crack fronts are FIB-sectioned and imaged in SEM. The increasing number of ULK layers leads to decrease in effective Gc of the stack. |
| Databáze: | OpenAIRE |
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