Autor:	Yifan Wang, Yongqing Huang, Jun Wang, Qi Wang, Xiaoyi Li, Zhigang Jia, Shiwei Cai, Can Deng, Yingce Yan, Xiaomin Ren
Rok vydání:	2013
Předmět:	Materials science business.industry Superlattice Chemical vapor deposition Epitaxy Buffer (optical fiber) Gallium arsenide chemistry.chemical_compound chemistry X-ray crystallography Optoelectronics Metalorganic vapour phase epitaxy business Layer (electronics)
Zdroj:	Scopus-Elsevier
DOI:	10.1364/acp.2013.af4a.2
Popis:	The epitaxy of GaAs/Si(001) has been carried out via inserting different buffer layers and different SLSs by MOCVD. High quality epilayers were obtained by AlAs buffer layer and GaAs0.85P0.15/GaAs SLS.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06e762d8c89f73258092a3d65ca6905b https://doi.org/10.1364/acp.2013.af4a.2 Zobrazit plný text záznamu