An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun
| Autor: | Rasmus S. Michaelsen, Kjeld M. Tamborg, Tom K. Johansen, Lei Yan, Vitaliy Zhurbenko |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Sige bicmos process
Materials science X band 02 engineering and technology Tuning Double balanced mixers Power level Circuit design and applications Balun Center frequency Mixers (machinery) Integrated circuit manufacture 0202 electrical engineering electronic engineering information engineering Schottky diode mixers Phase comparators Electrical and Electronic Engineering Silicon alloys Si-based devices and IC technologies business.industry dBm Bandwidth (signal processing) Electrical engineering Schottky diode 020206 networking & telecommunications 1dB compression point Reconfigurable hardware Semiconducting silicon Bicmos process Schottky barrier diodes Optoelectronics Local oscillators business IC technology |
| Zdroj: | Michaelsen, R S, Johansen, T K, Tamborg, K M, Zhurbenko, V & Yan, L 2017, ' An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun ', International Journal of Microwave and Wireless Technologies, vol. 9, no. 5, pp. 965-976 . https://doi.org/10.1017/S1759078716001069 |
| ISSN: | 1759-0795 1759-0787 |
| DOI: | 10.1017/s1759078716001069 |
| Popis: | In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm. |
| Databáze: | OpenAIRE |
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