Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
| Autor: | Andre Touboul, Gaudenzio Meneghesso, Anna Cavallini, Nathalie Labat, Mustapha Faqir, F. Danesin, Giovanni Verzellesi, Fausto Fantini, Enrico Zanoni, Antonio Castaldini, Fabiana Rampazzo, Christian Dua |
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| Přispěvatelé: | M. Faqira, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua |
| Rok vydání: | 2007 |
| Předmět: |
Materials science
DEEP LEVELS Gallium nitride Algan gan High-electron-mobility transistor Trap (computing) chemistry.chemical_compound Reliability (semiconductor) Electronic engineering Electrical and Electronic Engineering Safety Risk Reliability and Quality HEMT Computer simulation business.industry TRAPS Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) Gallium Nitride Charge Trapping chemistry numerical simulation Optoelectronics NITRIDES business Degradation (telecommunications) |
| Zdroj: | Microelectronics Reliability. 47:1639-1642 |
| ISSN: | 0026-2714 |
| Popis: | Traps are characterized in AlGaN–GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” surface-trap signals, i.e. the same type of current-mode DLTS (I-DLTS) or ICTS signals that are generally attributed to surface traps. Clarifying this aspect is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in wrong correction actions on the technological process. |
| Databáze: | OpenAIRE |
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