Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation
| Autor: | K. M. McNicholas, Daehwan Jung, Rodolfo Salas, Minjoo Lawrence Lee, Scott D. Sifferman, E. M. Krivoy, V. D. Dasika, Seth R. Bank, Samaresh Guchhait |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Electron mobility
Materials science lcsh:Biotechnology Nanoparticle 02 engineering and technology 01 natural sciences Arsenide Gallium arsenide chemistry.chemical_compound Electrical resistivity and conductivity lcsh:TP248.13-248.65 0103 physical sciences General Materials Science Growth rate 010302 applied physics Nanocomposite business.industry General Engineering Carrier lifetime 021001 nanoscience & nanotechnology lcsh:QC1-999 chemistry Optoelectronics 0210 nano-technology business lcsh:Physics |
| Zdroj: | APL Materials, Vol 5, Iss 9, Pp 096106-096106-7 (2017) |
| Popis: | We report the effects of the growth rate on the properties of iii-v nanocomposites containing rare-earth-monopnictide nanoparticles. In particular, the beneficial effects of surfactant-assisted growth of LuAs:In0.53Ga0.47As nanocomposites were found to be most profound at reduced LuAs growth rates. Substantial enhancement in the electrical and optical properties that are beneficial for ultrafast photoconductors was observed and is attributed to the higher structural quality of the InGaAs matrix in this new growth regime. The combined enhancements enabled a >50% increase in the amount of LuAs that could be grown without degrading the quality of the InGaAs overgrowth. Dark resistivity increased by ∼25× while maintaining carrier mobilities over 3000 cm2/V s; carrier lifetimes were reduced by >2×, even at high depositions of LuAs. The combined growth rate and surfactant enhancements offer a previously unexplored regime to enable high-performance fast photoconductors that may be integrated with telecom components for compact, broadly tunable, heterodyne THz source and detectors. |
| Databáze: | OpenAIRE |
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