Ion-beam-induced recrystallization in Si(100) studied with slow positron annihilation and Rutherford backscattering and channeling
| Autor: | Ryoichi Suzuki, Shoichiro Tanigawa, Naoto Kobayashi, T. Mikado, M. Hasegawa, N. Hayashi |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Ion beam Silicon General Physics and Astronomy chemistry.chemical_element Recrystallization (metallurgy) Epitaxy Amorphous solid law.invention Nuclear physics Condensed Matter::Materials Science Positron chemistry law Vacancy defect Physics::Accelerator Physics Crystallization Atomic physics |
| Zdroj: | Physical Review Letters. 70:45-48 |
| ISSN: | 0031-9007 |
| Popis: | Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a 〈100〉 Si substrate has been studied with irradiation of 400-keV ${\mathrm{Ar}}^{+}$ ions at the temperature of 400 \ifmmode^\circ\else\textdegree\fi{}C. The ion-beam-induced epitaxy was found to result in a drastic increase in the positron lifetime to a maximum value of 400 psec in the recrystallized silicon layer. It is demonstrated that vacancy migration is promoted during the epitaxial recrystallization to form defect complexes like trivacancies and/or quadrivacancies. |
| Databáze: | OpenAIRE |
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