Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
| Autor: | Daniel Donoval, R. Šramatý, J.-F. Carlin, Jan Kuzmik, Dionyz Pogany, G. Pozzovivo, Nicolas Grandjean, Peter Kordos, Gottfried Strasser, Jaroslav Kováč, Ales Chvala |
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| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Range (particle radiation) Materials science Physics and Astronomy (miscellaneous) Condensed matter physics business.industry Wide-bandgap semiconductor Schottky diode Thermionic emission 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences GAN Electrical resistivity and conductivity 0103 physical sciences Optoelectronics Current (fluid) 0210 nano-technology business Temperature coefficient Quantum tunnelling |
| Zdroj: | Applied Physics Letters. 96:223501 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-700 K. The experimental data were analyzed considering different current-transport mechanisms. From the analysis it follows that the tunneling current, which might be due to a multistep tunneling along dislocations, is the dominant component at all temperatures in the samples investigated. The barrier height of the Ni/InAlN/GaN Schottky diodes, evaluated from the thermionic emission current, shows a slightly negative temperature coefficient and its value at 300 K is >= 1.46 eV. This is significantly higher barrier height than reported before ( |
| Databáze: | OpenAIRE |
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