Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology
| Autor: | Roza Kotlyar, Payam Amin, Lieven M. K. Vandersypen, Singh Kanwaljit, Jessica M. Torres, G. Droulers, Matthew V. Metz, GertJan Eenink, R. Li, R. Pillarisetty, A. M. J. Zwerver, Thomas F. Watson, Nicole K. Thomas, Juan Pablo Dehollain, Jeanette M. Roberts, L. Massa, Christian Volk, Nodar Samkharadze, Menno Veldhorst, G. Zheng, J.M. Boter, Giordano Scappucci, D. Sabbagh, Lester Lampert, Patrick H. Keys, Brian Paquelet Wuetz, Hubert C. George, James S. Clarke |
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| Rok vydání: | 2018 |
| Předmět: |
0301 basic medicine
Speedup Computer science business.industry Semiconductor device fabrication Transistor Electrical engineering 02 engineering and technology 021001 nanoscience & nanotechnology law.invention 03 medical and health sciences Computer Science::Emerging Technologies 030104 developmental biology Semiconductor Quantum dot law Qubit Hardware_ARITHMETICANDLOGICSTRUCTURES 0210 nano-technology business Spin-½ Quantum computer |
| Zdroj: | 2018 IEEE International Electron Devices Meeting, IEDM 2018, 2018-December |
| DOI: | 10.1109/iedm.2018.8614624 |
| Popis: | Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots. |
| Databáze: | OpenAIRE |
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