Disordered Si:P nanostructures as switches and wires for nanodevices
| Autor: | Belita Koiller, Caio H. Lewenkopf, Amintor Dusko |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Nanostructure Condensed matter physics Dopant Condensed Matter - Mesoscale and Nanoscale Physics Nanowire Conductance FOS: Physical sciences 02 engineering and technology 021001 nanoscience & nanotechnology Interference (wave propagation) 01 natural sciences Maxima and minima Atomic orbital 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 010306 general physics 0210 nano-technology Ground state |
| DOI: | 10.48550/arxiv.1902.01332 |
| Popis: | Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si structure sites. Disorder is expected to lead to electronic localization in one-dimensional (1D) - like structures. Experiments, however, report good transport properties in quasi-1D P nanoribbons. We investigate theoretically their electronic properties using an effective single-particle approach based on a linear combination of donor orbitals (LCDO), with a basis of six orbitals per donor site, thus keeping the ground state donor orbitals' oscillatory behavior due to interference among the states at the Si conduction band minima. Our model for the P positioning errors accounts for the presently achievable placement precision allowing to study the localization crossover. In addition, we show that a gate-like potential may control its conductance and localization length, suggesting the possible use of Si:P nanostructures as elements of quantum devices, such as nanoswitches and nanowires. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|