AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al
| Autor: | Sungha Baek, George T. Wang, Yifei Mo, Azadeh Farzaneh, Shashank Misra, R. E. Butera, Kevin Dwyer, Quinn Campbell, Matthew S. Radue, Andrew Baczewski, Ezra Bussmann |
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| Rok vydání: | 2021 |
| Předmět: |
Chemical Physics (physics.chem-ph)
Condensed Matter - Materials Science Materials science Annealing (metallurgy) Analytical chemistry Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Secondary ion mass spectrometry General Energy X-ray photoelectron spectroscopy law Physics - Chemical Physics Desorption Atom Density functional theory Physical and Theoretical Chemistry Scanning tunneling microscope |
| Zdroj: | The Journal of Physical Chemistry C. 125:11336-11347 |
| ISSN: | 1932-7455 1932-7447 |
| Popis: | The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-doping techniques. This investigation was performed via scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. At room temperature, AlCl$_{3}$ readily adsorbed to the Si substrate dimers and dissociated to form a variety of species. Annealing of the AlCl$_{3}$-dosed substrate at temperatures below 450 $^{\circ}$C produced unique chlorinated aluminum chains (CACs) elongated along the Si(100) dimer row direction. An atomic model for the chains is proposed with supporting DFT calculations. Al was incorporated into the Si substrate upon annealing at 450 $^{\circ}$C and above, and Cl desorption was observed for temperatures beyond 450 $^{\circ}$C. Al-incorporated samples were encapsulated in Si and characterized by secondary ion mass spectrometry (SIMS) depth profiling to quantify the Al atom concentration, which was found to be in excess of 10$^{20}$ cm$^{-3}$ across a $\sim$2.7 nm thick $\delta$-doped region. The Al concentration achieved here and the processing parameters utilized promote AlCl$_{3}$ as a viable gaseous precursor for novel acceptor-doped Si materials and devices for quantum computing. Comment: 35 pages, 8 figures |
| Databáze: | OpenAIRE |
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