Polysilicon Source-Gated Transistors for Mixed-Signal Systems-on-Panel
| Autor: | Xiaojun Guo, John Martin Shannon, S. Ravi P. Silva, Radu A. Sporea |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Engineering
business.industry Dynamic range Transistor Electrical engineering Mixed-signal integrated circuit Hardware_PERFORMANCEANDRELIABILITY law.invention Current mirror law Hardware_INTEGRATEDCIRCUITS Field-effect transistor business Saturation (magnetic) Hardware_LOGICDESIGN Voltage Electronic circuit |
| Zdroj: | ECS Transactions. 33:419-424 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3481265 |
| Popis: | The performance benefits of using source-gated transistors (SGTs) in large-area analog electronic circuits are examined by both experiments and numerical simulations. As one of the key blocks in analog electronics, the current mirror circuit is taken as an example in the investigation. A comparison of current mirrors implemented with standard field effect transistors (FETs) and SGTs shows that the SGT based circuits can operate at a lower voltage and has larger output dynamic range for a given device geometry. The results are explained in relation to the saturation mechanisms of the SGT and are supported by experimental measurements of polysilicon devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|