Photoresponse characteristics from computationally efficient dynamic model of uni-traveling carrier photodiode
| Autor: | Abhirup Das Barman, Senjuti Khanra |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Physics::Optics Optical power 02 engineering and technology law.invention Condensed Matter::Materials Science Responsivity 020210 optoelectronics & photonics Optics Charge-carrier density law 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Photocurrent business.industry Bandwidth (signal processing) Biasing Rate equation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode Wavelength Optoelectronics Linear approximation Photonics business |
| Zdroj: | 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). |
| DOI: | 10.1109/nusod.2015.7292883 |
| Popis: | A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is developed in terms of coupled differential equations of incident photon flux and photo generated carrier density rates. For fast computation of model parameters linear approximation of material absorption coefficient is made with carrier density. Wavelength and bias voltage dependent responsivity is well demonstrated by the model and their values at different absorption layer widths agree well with the experimental results. Optical power induced output photocurrent saturation is also explained. Furthermore, from the temporal variation of output photocurrent, estimation of device bandwidth is shown. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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