Multilevel programming reliability in Si-doped GeSbTe for Storage Class Memory
| Autor: | J. Garrione, Marie-Claire Cyrille, Nicolas Bernier, G. Lama, N. Castellani, Gabriele Navarro, Emmanuel Nolot, Etienne Nowak, Mathieu Bernard, Guillaume Bourgeois |
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| Přispěvatelé: | CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information, European Project: 783176,WAKeMeUp |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
multilevel I Materials science Doping Si-doping 02 engineering and technology GeSbTe Multilevel programming 021001 nanoscience & nanotechnology 01 natural sciences SCM chemistry.chemical_compound [SPI]Engineering Sciences [physics] Reliability (semiconductor) chemistry PCM 0103 physical sciences Electronic engineering Data retention 0210 nano-technology Storage class memory Protocol (object-oriented programming) Volatile memory |
| Zdroj: | IRPS 2021-2021 IEEE International Reliability Physics Symposium IRPS 2021-2021 IEEE International Reliability Physics Symposium, Mar 2021, Monterey, United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405116⟩ IRPS 2021 IEEE International Reliability Physics Symposium (IRPS) |
| Popis: | Phase-Change Memory (PCM) demonstrated to be a mature Non- Volatile Memory technology to address Storage Class Memory (SCM) applications that can be distinguished in memory-type (M-SCM) and storage-type (S-SCM). In this work, we present how aGeSbTe (aGST) alloy can address both SCM types, in particular using Si doping. Thanks to the electrical characterization of 4 kb PCM arrays, we show how Si doping in aGST helps tuning the crystallization dynamic during the programming operations, leading to highly reliable intermediate resistance states. We support our results by TEM analyses and finally we present improved multi-level cell (MLC) operations in Si-doped devices, achieved already with a simple double-step protocol. We demonstrate the aGST alloy suitability for SCM applications: undoped alloy allows targeting M-SCM thanks to its high endurance and high programming speed, whereas Si-doped aGST featuring MLC capability and improved data retention can address S-SCM specifications. |
| Databáze: | OpenAIRE |
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