Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy
| Autor: | Minjun Lee, Young Kuk, Hoyeon Jeon, Yongchan Yoo, Myungchul Oh, Sunwouk Yi, Inhae Zoh, Hanho Lee, Chao Zhang, Sungmin Kim |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier RF power amplifier Scanning tunneling spectroscopy 01 natural sciences 010305 fluids & plasmas law.invention law 0103 physical sciences Operational amplifier Optoelectronics Field-effect transistor Wideband Scanning tunneling microscope business Instrumentation Common emitter |
| Zdroj: | Review of Scientific Instruments. 88:066109 |
| ISSN: | 1089-7623 0034-6748 |
| DOI: | 10.1063/1.4990041 |
| Popis: | A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|