The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

Autor: Francisco Guinea, P. Lucignano, Yuxin Song, Floriana Lombardi, Sophie Charpentier, Marco Bernasconi, Boguslaw Mroz, Giorgio Benedek, Davide Campi, M. Wiesner, Arturo Tagliacozzo, Shunchong Wang, A. Trzaskowska
Přispěvatelé: Wiesner, M., Trzaskowska, A., Mroz, B., Charpentier, S., Wang, S., Song, Y., Lombardi, F., Lucignano, P., Benedek, G., Campi, D., Bernasconi, M., Guinea, F., Tagliacozzo, A., Wiesner, M, Trzaskowska, A, Mroz, B, Charpentier, S, Wang, S, Song, Y, Lombardi, F, Lucignano, P, Benedek, G, Campi, D, Bernasconi, M, Guinea, F, Tagliacozzo, A
Rok vydání: 2017
Předmět:
Materials science
Phonon
lcsh:Medicine
02 engineering and technology
Electrical Engineering
Electronic Engineering
Information Engineering

01 natural sciences
Article
Light scattering
Condensed Matter::Materials Science
National Graphene Institute
Brillouin scattering
Condensed Matter::Superconductivity
0103 physical sciences
General
phonon
lcsh:Science
010306 general physics
Penetration depth
FIS/03 - FISICA DELLA MATERIA
Multidisciplinary
Condensed matter physics
business.industry
lcsh:R
Surface phonon
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Brillouin zone
Semiconductor
Topological insulator
electron-phonon interaction
ResearchInstitutes_Networks_Beacons/national_graphene_institute
lcsh:Q
Condensed Matter::Strongly Correlated Electrons
0210 nano-technology
business
Zdroj: Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
instname
Scientific Reports (2045-2322) vol.7(2017)
Wiesner, M, Trzaskowska, A, Mroz, B, Charpentier, S, Wang, S, Song, Y, Lombardi, F, Lucignano, P, Benedek, G, Campi, D, Bernasconi, M, Guinea, F & Tagliacozzo, A 2017, ' The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering ', Scientific Reports, vol. 7, no. 1, 16449 . https://doi.org/10.1038/s41598-017-16313-5
Wiesner, M, Trzaskowska, A, Mroz, B, Charpentier, S, Wang, S, Song, Y, Lombardi, F, Lucignano, P, Benedek, G, Campi, D, Bernasconi, M, Guinea, F & Tagliacozzo, A 2017, ' The electron-phonon interaction at deep Bi 2 Te 3-semiconductor interfaces from Brillouin light scattering ' Scientific Reports, vol 7, no. 1, 16449 . DOI: 10.1038/s41598-017-16313-5
ISSN: 2045-2322
Popis: It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
Databáze: OpenAIRE