In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
| Autor: | Shawn-Yu Lin, Detlev Grützmacher, T. O. Sedgwick, D. A. Syphers, Alexander Zaslavsky, T. P. Smith |
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| Rok vydání: | 1993 |
| Předmět: | |
| Zdroj: | Physical Review B. 48:15112-15115 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | We have observed strong peak shifts in the magnetotunneling I(V, B⊥) characteristics of strained p-Si/Si 1-x Ge x double-barrier resonant tunneling structures as the transverse field B⊥ orientation is rotated in the sample plane. These peak shifts map out the in-plane anisotropy of the light- and heavy-hole subbands in the Si-Ge well. At large in-plane waves vectors, the heavy- and light-hole E (k⊥) contours are strongly crimped: the heavy-hole E (k⊥) is dilated in the and compressed in the directions, while the light-hole anisotropy id rotated by 45 o with respect to that of the heavy hole |
| Databáze: | OpenAIRE |
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